AON7405
30V P-Channel MOSFET
General Description
The AON7405 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge.
This device is ideal for load switch and battery pr otection applications.
Product Summary
VDS
ID (at VGS= -10V)
RDS(ON) (at VGS= -10V)
RDS(ON) (at VGS = -6V)
-30V
-50A
< 6.2mΩ
< 8.9mΩ
100% UIS Tested
100% Rg Tested
Top View
D
1
8
2
7
3
6
4
5
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
CurrentG
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
IAR, IAS
EAR, EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum
-30
±25
-50
-39
-210
-25
-20
-44
97
83
33
6.25
4
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
16
45
Maximum Junction-to-Case
Steady-State
RθJC
1.1
Max
20
55
1.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1/6
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