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AON7405

30V P-Channel MOSFET

Unspecified 

AON7405

30V P-Channel MOSFET

General Description

The AON7405 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge.

This device is ideal for load switch and battery pr otection applications.

Product Summary

VDS

ID (at VGS= -10V)

RDS(ON) (at VGS= -10V)

RDS(ON) (at VGS = -6V)

-30V

-50A

< 6.2mΩ

< 8.9mΩ

100% UIS Tested

100% Rg Tested

Top View

D

1

8

2

7

3

6

4

5

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain

CurrentG

TC=25°C

TC=100°C

ID

Pulsed Drain Current C

IDM

Continuous Drain

TA=25°C

Current

TA=70°C

Avalanche Current C

Repetitive avalanche energy L=0.1mH C

IDSM

IAR, IAS

EAR, EAS

TC=25°C

Power Dissipation B TC=100°C

PD

TA=25°C

Power Dissipation A TA=70°C

PDSM

Junction and Storage Temperature Range

TJ, TSTG

G

S

Maximum

-30

±25

-50

-39

-210

-25

-20

-44

97

83

33

6.25

4

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Maximum Junction-to-Ambient A t ≤ 10s

Maximum Junction-to-Ambient A D Steady-State

RθJA

16

45

Maximum Junction-to-Case

Steady-State

RθJC

1.1

Max

20

55

1.5

Units

V

V

A

A

A

mJ

W

W

°C

Units

°C/W

°C/W

°C/W

1/6

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