BAP51-02 Ver la hoja de datos (PDF) - NXP Semiconductors.
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BAP51-02 Datasheet PDF : 6 Pages
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NXP Semiconductors
General purpose PIN diode
Product specification
BAP51-02
FEATURES
• Low diode capacitance
• Low diode forward resistance.
APPLICATIONS
• General RF applications.
DESCRIPTION
General purpose PIN diode in a SOD523 ultra small SMD
plastic package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
handbook, halfpage 1
2
Top view
MAM405
Marking code: K1.
Fig.1 Simplified outline (SOD523) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VR
continuous reverse voltage
IF
continuous forward current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
CONDITIONS
Ts = 90 °C
MIN.
−
−
−
−65
−65
MAX. UNIT
60
V
50
mA
715 mW
+150 °C
+150 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
VR
reverse voltage
IR
reverse current
Cd
diode capacitance
rD
diode forward resistance
CONDITIONS
IF = 50 mA
IR = 10 µA
VR = 50 V
VR = 0; f = 1 MHz
VR = 1 V; f = 1 MHz
VR = 5 V; f = 1 MHz
IF = 0.5 mA; f = 100 MHz; note 1
IF = 1 mA; f = 100 MHz; note 1
IF = 10 mA; f = 100 MHz; note 1
MIN.
−
50
−
−
−
−
−
−
−
TYP.
0.95
−
−
0.4
0.3
0.2
5.5
3.6
1.5
MAX. UNIT
1.1 V
−
V
100 nA
−
pF
0.55 pF
0.35 pF
9
Ω
6.5 Ω
2.5 Ω
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
VALUE
85
UNIT
K/W
Rev. 03 - 2 January 2008
2 of 6
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