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BAV99

Surface-mount Dual Switching Diodes

Silicon Standard Corp. 

BAV99

Surface-mount Dual Switching Diodes

Voltage range 75 Volts

Power Dissipation 350 mWatts

FEATURES

Fast switching speed

Surface mount package ideally suited for

automatic insertion

For general purpose switching applications

High conductance

MECHANICAL DATA

Case: SOT-23, Molded plastic

Terminals: Matte tin plating

Polarity: See diagram

Marking: JE

Weight: 0.008 gram (approx.)

Pb-free lead finish (second-level interconnect).

0.020(0.51)

0.015(0.37)

SOT-23

0.055(1.40) 0.098(2.50)

0.047(1.19) 0.083(2.10)

0.080(2.05)

0.070(1.78)

0.024(0.61)

0.018(0.45)

0.120(3.05)

0.104(2.65)

0.041(1.05)

0.047(0.89)

0.043(1.10)

0.035(0.89)

0.006(0.15)

0.001(0.013)

0.024(0.61)

0.018(0.45)

0.007(0.178)

0.003(0.076)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

BAV99

Non-Repetitive Peak Reverse Voltage

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Forward Continuous Current (Note 1)

Average Rectifier Output Current (Note 1)

Non-Repetitive Peak Forward Surge Current

@ t=1.0uS

@ t=1.0S

Power Dissipation (Note 1)

Thermal Resistance Junction to Ambient Air

(Note 1)

Operating and Storage Temperature Range

VRM

VRRM

VRWM

VR

VR(RMS)

IFM

Io

IFSM

Pd

Rthja

TJ, TSTG

100

75

53

300

150

2.0

1.0

350

357

-65 to + 150

Units

V

V

V

mA

mA

A

mW

°C/W

°C

Parameter

Symbol

Min

Max

Forward Voltage

IF=1.0mA

IF= 10mA

IF = 50mA

VF

IF=150mA

0.715

-

0.855

1.0

1.25

Peak Reverse Current

VR=75V

VR=75V, Tj=150°C

VR=25V, TJ=150°C

IR

VR=20V

2.5

-

50

30

25

Junction Capacitance VR=0, f=1.0MHz

Cj

-

2.0

Reverse Recovery Time (Note 2)

trr

-

4.0

Notes: 1. Valid provided that terminals are kept at ambient temperature.

2. Reverse recovery test conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100Ω

Units

V

uA

nA

pF

ns

8/26/2004 Rev.1.01

www.SiliconStandard.com

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