BAW56LT1 Ver la hoja de datos (PDF) - Silicon Standard Corp.
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BAW56LT1 Datasheet PDF : 2 Pages
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FEATURES
Power dissipation, PD: 225 mW (TA=25℃)
Forward Current, IF: 200 mA
Reverse Voltage, VR: 70 V
Operating and storage junction temperature
range: TJ, Tstg: -55℃ to +150℃
SOT-23 Plastic-Encapsulate package
Device Making: A1
ELECTRICAL CHARACTERISTICS
BAW56LT1
Switching Diode
Note: Unless otherwise specified, these specifications apply over the operating ambient temperature of 25℃.
01/14/2007 Rev. 1.00
www.SiliconStandard.com
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