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BC368

NPN medium power transistor; 20 V, 1 A

NXP Semiconductors. 

NXP Semiconductors

NPN medium power transistor;

20 V, 1 A

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

ICBO

IEBO

hFE

VCEsat

VBE

Cc

fT

collector-base cut-off current

emitter-base cut-off current

DC current gain

collector-emitter saturation voltage

base-emitter voltage

collector capacitance

transition frequency

VCB = 25 V; IE = 0 A

VCB = 25 V; IE = 0 A;

Tamb = 150 °C

VEB = 5 V; IC = 0 A

VCE = 10 V; IC = 5 mA

VCE = 1 V; IC = 500 mA

VCE = 1 V; IC = 1 mA

IC = 1 A; IB = 100 mA

VCE = 10 V; IC = 5 mA

VCE = 1 V; IC = 1 A

VCB = 10 V; IE = ie = 0 A;

f = 1 MHz

VCE = 5 V; IC = 50 mA;

f = 100 MHz

Product data sheet

BC368

MIN.

−

−

TYP.

−

−

MAX. UNIT

100 nA

10

μA

−

−

100 nA

50

−

−

85

−

375

60

−

−

−

−

500 mV

−

−

700 mV

−

−

1

V

−

22

−

pF

40

170 −

MHz

2.4

handbooICk, halfpage

(A)

2.0

1.6

1.2

0.8

0.4

MLE325

(1)

(2)

(3)

(4)

(5)

(6)

(7)

(8)

(9)

(10)

0

0

1

2

3

4

5

VCE (V)

Tamb = 25 °C.

(1) IB = 10 mA.

(2) IB = 9 mA.

(3) IB = 8 mA.

(4) IB = 7 mA.

(5) IB = 6 mA.

(6) IB = 5 mA.

(7) IB = 4 mA.

(8) IB = 3 mA.

(9) IB = 2 mA.

(10) IB = 1 mA.

Fig.3 Collector current as a function of

collector-emitter voltage; typical values.

2004 Nov 05

handbook1, halfpage

VBE

(V)

MLE326

10−1

10−4

10−3

10−2

10−1

1

10

IC (A)

VCE = 1 V.

Fig.4 Base-emitter voltage as function of collector

current; typical values.

5

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