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BD744

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

BD744

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB=B -0.5A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -15A; IB= -5A

VBE(on)-1 Base-Emitter On Voltage

IC= -5A ; VCE= -4V

VBE(on)-2 Base-Emitter On Voltage

IC= -15A ; VCE= -4V

ICBO

Collector Cutoff Current

VCB= -50V; IE= 0

VCB= -50V; IE= 0; TC= 125℃

ICEO

Collector Cutoff Current

VCE= -30V; IB=B 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -1A ; VCE= -4V

hFE-2

DC Current Gain

IC= -5A ; VCE= -4V

hFE-3

DC Current Gain

IC= -15A ; VCE= -4V

Switching Times

td

Delay Time

tr

Rise Time

ts

Storage Time

tf

Fall time

IC= -5A; IB1= -IB2= -5A;

VBE(off)= 4.2V; RL= 6Ω;

tp= 20μs,DutyCycle≤ 2%

MIN

MAX UNIT

-45

V

-1.0 V

-3.0 V

-1.0 V

-3.0 V

-0.1

mA

-5.0

-0.1 mA

-0.5 mA

40

20

150

5

20

ns

120

ns

600

ns

300

ns

isc Website：www.iscsemi.cn

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