BD909 Ver la hoja de datos (PDF) - Comset Semiconductors
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BD909 Datasheet PDF : 3 Pages
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SEMICONDUCTORS
BD909 – BD911
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICBO
Collector Cutoff
Current
VCB = 80 V
VCB = 100 V
VCB = 80 V
VCB = 100 V
TJ = 25°C
BD909
BD911
TJ = 150°C
BD909
BD911
ICEO
Collector Cutoff
Current
VCE = 40 V
VCE = 50 V
BD909
BD911
IEBO
Emitter Cutoff Current VEB = 5 V, IC = 0
BD909
BD911
VCE0sust
Collector-Emitter
Sustaining Voltage (*)
IB = 0, IC = 0.1 A
BD909
BD911
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC = 5 A, IB = 500 mA
IC =10 A, IB = 2.5 A
BD909
BD911
BD909
BD911
VBE(SAT)
Base-Emitter
Saturation Voltage (*)
IC =10 A, IB = 2.5 A
BD909
BD911
VBE
Base-Emitter Voltage
(*)
IC = 5A, VCE = 4 V
BD909
BD911
hFE
DC Current Gain (*) IC = 0.5A, VCE = 4 V
BD909
BD911
hFE
DC Current Gain (*) IC = 5A, VCE = 4 V
BD909
BD911
hFE
DC Current Gain (*) IC = 10A, VCE = 4 V
BD909
BD911
fT
Transition Frequency IC = 0.5A, VCE = 4 V
BD909
BD911
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 1.5%
Value
Unit
Min Typ Max
- - 0.5
mA
- -5
- - 1 mA
--
80 -
100 -
--
--
1 mA
-
-
V
1
V
3
- - 2.5 V
- - 1.5 V
40 - 250
15 - 150 -
5- -
3 - - MHz
25/09/2012
COMSET SEMICONDUCTORS
2|3
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