BSM100GB170DN2 Ver la hoja de datos (PDF) - eupec GmbH
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BSM100GB170DN2 Datasheet PDF : 10 Pages
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BSM 100 GB 170 DN2
Typ. gate charge
VGE = ƒ(QGate)
parameter: IC puls = 100 A
20
V
VGE 16
14
12
800 V
1200 V
10
8
6
4
2
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 µC 1.7
QGate
Reverse biased safe operating area
ICpuls = f(VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tp ≤ 1 ms, L < 25 nH
2.5
Typ. capacitances
C = f (VCE)
parameter: VGE = 0, f = 1 MHz
10 2
nF
C
10 1
Ciss
10 0
Coss
Crss
10 -1
0
5 10 15 20 25 30 V 40
VCE
Short circuit safe operating area
ICsc = f(VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tp ≤ 10 µs, L < 25 nH
12
ICpulsIC
di/dt =
1.5
1000A/µs
3000A/µs
5000A/µs
1.0
0.5
ICsc/IC
di/dt = 1000A/µs
8
3000A/µs
5000A/µs
6
4
° allowed numbers of
short circuit: <1000
° time between short
2 circuit: >1s
0.0
0 200 400 600 800 1000 1200 1400 V 1800
VCE
0
0 200 400 600 800 1000 1200 1400 V 1800
VCE
6
Oct-27-1997
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