BSM100GB170DN2 Ver la hoja de datos (PDF) - Siemens AG
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BSM100GB170DN2 Datasheet PDF : 9 Pages
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BSM 100 GB 170 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
VCC = 1200 V, VGE = 15 V, IC = 100 A
RGon = 15 Ω
-
450
Rise time
tr
VCC = 1200 V, VGE = 15 V, IC = 100 A
RGon = 15 Ω
-
200
Turn-off delay time
td(off)
VCC = 1200 V, VGE = -15 V, IC = 100 A
RGoff = 15 Ω
-
850
Fall time
tf
VCC = 1200 V, VGE = -15 V, IC = 100 A
RGoff = 15 Ω
-
110
ns
900
400
1200
160
Free-Wheel Diode
Diode forward voltage
VF
IF = 100 A, VGE = 0 V, Tj = 25 °C
-
IF = 100 A, VGE = 0 V, Tj = 125 °C
-
Reverse recovery time
trr
IF = 100 A, VR = -1200 V, VGE = 0 V
diF/dt = -1000 A/µs, Tj = 125 °C
-
Reverse recovery charge
Qrr
IF = 100 A, VR = -1200 V, VGE = 0 V
diF/dt = -1000 A/µs
Tj = 25 °C
-
Tj = 125 °C
-
V
2.3
2.8
2.1
-
µs
0.5
-
µC
8
-
25
-
Semiconductor Group
3
Aug-01-1996
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