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CM30TF-12H

IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE

Mitsumi 

MITSUBISHI IGBT MODULES

CM30TF-12H

MEDIUM POWER SWITCHING USE

INSULATED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings

Symbol

Junction Temperature

Storage Temperature

Collector-Emitter Voltage (G-E SHORT)

Gate-Emitter Voltage (C-E SHORT)

Collector Current (TC = 25°C)

Peak Collector Current

Emitter Current** (TC = 25°C)

Peak Emitter Current**

Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)

Mounting Torque, M5 Mounting

Tj

Tstg

VCES

VGES

IC

ICM

IE

IEM

Pc

–

Weight

–

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)

Viso

*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Collector-Cutoff Current

ICES

VCE = VCES, VGE = 0V

Gate Leakage Current

IGES

VGE = VGES, VCE = 0V

Gate-Emitter Threshold Voltage

VGE(th)

IC = 3mA, VCE = 10V

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 30A, VGE = 15V

IC = 30A, VGE = 15V, Tj = 150°C

Total Gate Charge

QG

VCC = 300V, IC = 30A, VGE = 15V

Emitter-Collector Voltage

VEC

IE = 30A, VGE = 0V

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Input Capacitance

Cies

Output Capacitance

Coes

VGE = 0V, VCE = 10V

Reverse Transfer Capacitance

Cres

Resistive

Turn-on Delay Time

td(on)

Load

Switching

Rise Time

Turn-off Delay Time

tr

td(off)

VCC = 300V, IC = 30A,

VGE1 = VGE2 = 15V, RG = 21Ω

Times

Fall Time

Diode Reverse Recovery Time

tf

trr

IE = 30A, diE/dt = –60A/µs

Diode Reverse Recovery Charge

Qrr

IE = 30A, diE/dt = –60A/µs

CM30TF-12H

–40 to 150

–40 to 125

600

±20

30

60*

30

60*

150

1.47 ~ 1.96

260

2500

Units

°C

°C

Volts

Volts

Amperes

Amperes

Amperes

Amperes

Watts

N·m

Grams

Vrms

Min.

Typ.

Max. Units

–

–

1.0

mA

–

–

0.5

µA

4.5

6.0

7.5

Volts

–

2.1

2.8** Volts

–

2.15

–

Volts

–

90

–

nC

–

–

2.8

Volts

Min.

Typ.

Max. Units

–

–

3.0

nF

–

–

1.1

nF

–

–

0.6

nF

–

–

120

ns

–

–

300

ns

–

–

200

ns

–

–

300

ns

–

–

110

ns

–

0.08

–

µC

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max. Units

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Case

Contact Thermal Resistance

Rth(j-c)

Per IGBT

–

Rth(j-c)

Per FWDi

–

Rth(c-f)

Per Module, Thermal Grease Applied

–

–

0.80 °C/W

–

2.00 °C/W

–

0.058 °C/W

Sep.1998

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