CS5126XDR8 Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Lista de partido
CS5126XDR8 Datasheet PDF : 12 Pages
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36–75VIN
C1
0.1 µF
100 V
L1
10 µH
C2
1.5 µF
100 V
R2
200 k
R5
17.4 k
ENABLE
48VRTN
C9
1000 pF
CS5124, CS5126
R1
510 k
C7
0.1 µF
Q1
ZVN3310A D4
R4
10 Ω
BAS16LT1
C4
0.47 µF
25 V
VCC
BIAS
GND
GATE
UVLO
IS
CS5124
SS
VFB
CTX15–14514
T1
D1
MBRD360CT
5VOUT
Q2
IRFR220
R8
0.39 Ω
R3
47 Ω
C3
0.022 µF
R6
1.0 k
R7
30.1 k
C5
C6
47 µF
10 V
U2
0.01 µF
C8
1000 pF
TPS5908
R9
10 k
Figure 1. Application Diagram
ISOLATED
RTN
MAXIMUM RATINGS*
Rating
Operating Junction Temperature, TJ
Storage Temperature Range, TS
ESD Susceptibility (Human Body Model)
Lead Temperature Soldering:
1. 60 second maximum above 183°C.
*The maximum package power dissipation must be observed.
MAXIMUM RATINGS
PIN NAME
VCC Power Input
PIN SYMBOL
VCC
Clock Synchronization Input
VCC Clamp Output
UVLO Shutdown Input
Soft Start Capacitor Input
Voltage Feedback Input
Current Sense Input
Ground
SYNC (CS5126)
VBIAS (CS5124)
UVLO
SS
VFB
ISENSE
GROUND
Gate Drive Output
GATE
Value
Unit
–40 to 135
°C
–40 to 150
°C
2.0
kV
Reflow: (SMD styles only) (Note 1) 230 peak
°C
VMAX
20 V
20 V
20 V
6.0 V
6.0 V
6.0 V
6.0 V
0V
20 V
VMIN
–0.3 V
–0.3 V
–0.3 V
–0.3 V
–0.3 V
–0.3 V
–0.3 V
0V
–0.3 V
ISOURCE
1.0 mA
1.0 mA
1.0 mA
1.0 mA
1.0 mA
3.0 mA
1.0 mA
1.5 A peak
200 mA DC
1.5 A peak
200 mA DC
ISINK
1.5 A Peak
200 mA DC
1.0 mA
1.0 mA
1.0 mA
2.0 mA
20 mA
1.0 mA
1.0 mA
1.5 A peak
200 mA DC
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