FL10KM-12A(2003) Ver la hoja de datos (PDF) - Renesas Electronics
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FL10KM-12A Datasheet PDF : 5 Pages
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MITSUBISHI Nch POWER MOSFET
FL10KM-12A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 600V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
PERFORMANCE CURVES
Limits
Unit
Min.
Typ. Max.
600
—
—
V
±30
V
—
—
±10
µA
—
—
1
mA
2.0
3.0
4.0
V
—
0.92
1.10
Ω
—
4.60
5.50
V
—
7.0
—
S
—
1150
—
pF
—
135
—
pF
—
45
—
pF
—
24
—
ns
—
40
—
ns
—
220
—
ns
—
85
—
ns
—
1.5
2.0
V
—
—
3.13 °C/W
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
5
3
tw = 10µs
2
101
7
5
100µs
3
2
1ms
100
7
5
10ms
3
2
10–1 TC = 25°C
7 Single Pulse
DC
5
3
5 7 101 2 3
5 7 102 2 3
5 7 103 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
PD = 40W
16
VGS = 10V
TC = 25°C
Pulse Test
6V
12
5V
8
4.5V
4
4V
0
0
10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
10
PD = 40W
TC = 25°C
Pulse Test
8
VGS = 10V
6V
5V
4.5V
6
4
4V
2
0
0
4
8
12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
Sep. 2001
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