FM25C160B-GA(2014) Ver la hoja de datos (PDF) - Cypress Semiconductor

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FM25C160B-GA
(Rev.:2014)

16-Kbit (2 K × 8) Serial (SPI) Automotive F-RAM

Cypress Semiconductor 

FM25C160B

Maximum Ratings

Exceeding maximum ratings may shorten the useful life of the

device. These user guidelines are not tested.

Storage temperature ................................ –55 C to +125 C

Maximum junction temperature ................................. 135 C

Supply voltage on VDD relative to VSS .........–1.0 V to +7.0 V

Input voltage ............. –1.0 V to +7.0 V and VIN < VDD+1.0 V

DC voltage applied to outputs

in High Z state .................................... –0.5 V to VDD + 0.5 V

Transient voltage (< 20 ns) on

any pin to ground potential ................. –2.0 V to VDD + 2.0 V

Package power dissipation

capability (TA = 25 °C) ................................................. 1.0 W

DC Electrical Characteristics

Surface mount lead soldering

temperature (3 seconds) ......................................... +260 C

DC output current (1 output at a time, 1s duration) .... 15 mA

Electrostatic Discharge Voltage

Human Body Model (AEC-Q100-002 Rev. E) ................... 4 kV

Charged Device Model (AEC-Q100-011 Rev. B) ........... 1.25 kV

Machine Model (AEC-Q100-003 Rev. E) .......................... 300 V

Latch up current ..................................................... > 140 mA

Operating Range

Range

Ambient Temperature (TA)

VDD

Automotive-E

–40 C to +125 C

4.5 V to 5.5 V

Over the Operating Range

Parameter

Description

Test Conditions

Min

Typ [5]

Max Unit

VDD

Power supply

IDD

VDD supply current

4.5

5.0

5.5

V

SCK toggling between fSCK = 1 MHz

–

VDD – 0.3 V and VSS, other

inputs VSS or VDD – 0.3 V.

fSCK = 15 MHz

–

SO = Open.

–

0.3 mA

–

3

mA

ISB

ILI

ILO

VIH

VIL

VOH

VOL

VHYS[5]

VDD standby current

CS = VDD. All other inputs TA = 85 °C

–

VSS or VDD.

TA = 125 °C

–

–

10

A

–

30

A

Input leakage current

VSS < VIN < VDD

–

–

±1

A

Output leakage current

VSS < VOUT < VDD

–

–

±1

A

Input HIGH voltage

0.75 × VDD – VDD + 0.3 V

Input LOW voltage

– 0.3

– 0.25 × VDD V

Output HIGH voltage

IOH = –2 mA

VDD – 0.8 –

–

V

Output LOW voltage

IOL = 2 mA

–

–

0.4

V

Input Hysteresis (CS and SCK pin)

0.05 × VDD –

–

V

Notes

3. Typical values are at 25 °C, VDD = VDD(typ). Not 100% tested.

4. This parameter is characterized but not 100% tested.

Document Number: 001-86150 Rev. *A

Page 11 of 20

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