FS40SM-5 Ver la hoja de datos (PDF) - Renesas Electronics
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FS40SM-5 Datasheet PDF : 7 Pages
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MITSUBISHI Nch POWER MOSFET
FS40SM-5
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 250V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 20A, VGS = 10V
ID = 20A, VGS = 10V
ID = 20A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 150V, ID = 20A, VGS = 10V, RGEN = RGS = 50Ω
IS = 20A, VGS = 0V
Channel to case
Limits
Unit
Min.
Typ. Max.
250
—
—
V
±30
—
—
V
—
—
±10
µA
—
—
1
mA
2
3
4
V
—
0.066 0.086 Ω
—
1.32
1.72
V
12.0 18.0
—
S
—
2850
—
pF
—
580
—
pF
—
110
—
pF
—
45
—
ns
—
125
—
ns
—
310
—
ns
—
140
—
ns
—
1.5
2.0
V
—
—
0.45 °C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
300
250
200
150
100
50
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V
50
10V
7V
6V
40
PD =
275W
30
TC = 25°C
Pulse Test
20
5V
MAXIMUM SAFE OPERATING AREA
3
2
102
tw=10µs
7
5
100µs
3
2
1ms
101
7
5
3
10ms
2
100ms
100 TC = 25°C
DC
7 Single Pulse
5
3
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS=20V
20
10V
6V
PD = 275W
5V
16
12
TC = 25°C
Pulse Test
4.5V
8
10
0
4V
0
10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
4
4V
0
0
4
8
12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
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