FS4VS-12 Ver la hoja de datos (PDF) - Renesas Electronics
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FS4VS-12 Datasheet PDF : 7 Pages
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MITSUBISHI Nch POWER MOSFET
FS4VS-12
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 600V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 2A, VGS = 10V
ID = 2A, VGS = 10V
ID = 2A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 2A, VGS = 10V, RGEN = RGS = 50Ω
IS = 2A, VGS = 0V
Channel to case
Limits
Unit
Min.
Typ. Max.
600
—
—
V
±30
—
—
V
—
—
±10
µA
—
—
1
mA
2
3
4
V
—
2.0
2.6
Ω
—
4.0
5.2
V
1.8
3.0
—
S
—
600
—
pF
—
65
—
pF
—
10
—
pF
—
15
—
ns
—
15
—
ns
—
60
—
ns
—
30
—
ns
—
1.5
2.0
V
—
—
1.39 °C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
80
60
40
20
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
10
PD = 90W
8
VGS = 20V
10V
8V
MAXIMUM SAFE OPERATING AREA
3
2
101
tw=10µs
7
5
3
100µs
2
100
1ms
7
5
3
10ms
2
TC = 25°C
DC
10–1 Single Pulse
7
5
3
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
5
VGS = 20V
10V
6V
8V
TC = 25°C
4 Pulse Test
6
6V
TC = 25°C
4
Pulse Test
2
5V
0
0
10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
3
2
5V
1
0
0
4
8
12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
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