FZT1047A Ver la hoja de datos (PDF) - TY Semiconductor

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componentes Descripción

Lista de partido

FZT1047A

NPN Silicon Planar Medium Power High Gain Transistor

TY Semiconductor 

SMD Type

Electrical Characteristics Ta = 25

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base breakdown voltage

Collector Cut-Off Current

Collector Emitter Cut-Off Current

Emitter Cut-Off Current

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Base-emitter ON voltage *

Static Forward Current Transfer Ratio *

Transitional frequency

Output capacitance

Turn-on time

Turn-off time

* Pulse test: tp = 300 ìs; d

0.02.

Symbol

V(BR)CBO IC=100ìA

V(BR)CEO IC=10mA

V(BR)EBO IE=100ìA

ICBO VCB=20V

ICES VCE=20V

IEBO VEB=4V

Testconditons

IC=0.5A, IB=10mA

VCE(sat) IC=1A, IB=10mA

IC=3A, IB=15mA

IC=5A, IB=25mA

VBE(sat) IC=5A, IB=250mA

VBE(on) IC=5A, VCE=2V

IC=10mA, VCE=2V*

IC=0.5A, VCE=2V*

hFE IC=1A, VCE=2V*

IC=5A, VCE=2V*

IC=20A, VCE=2V*

fT IC=50mA, VCE=10V f=50MHz

Cobo VCB=10V, f=1MHz

t(on) IC=4A, VCC=10V

t(off) IB1=IB2=40mA

Transistors

Product specification

FZT1047A

Min Typ Max Unit

35 65

V

10 16

V

5 8.9

V

0.3 10 nA

0.3 10 nA

0.3 10 nA

25 40

50

140

70

200

mV

220 350

925 1000 mV

890 975 mV

280 430

290 440

300 450 1200

200 330

60 110

150

MHz

85 110 pF

130

ns

230

ns

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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