HSS104 Ver la hoja de datos (PDF) - Renesas Electronics

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HSS104

Silicon Epitaxial Planar Diode for High Speed Switching

Renesas Electronics 

HSS104

Absolute Maximum Ratings

Item

Peak reverse voltage

Reverse voltage

Average rectified current

Peak forward current

Non-Repetitive peak forward surge current

Power dissipation

Junction temperature

Storage temperature

Note: Within 1s forward surge current.

VRM

VR

IO

IFM

IFSM *

Pd

Tj

Tstg

Symbol

Electrical Characteristics

Item

Symbol Min

Typ

Max

Forward voltage

VF

—

—

1.2

Reverse current

IR

—

—

0.5

Capacitance

C

—

—

3.0

Reverse recovery time trr

—

—

3.0

Value

40

35

110

300

400

300

175

−65 to +175

(Ta = 25°C)

Unit

V

V

mA

mA

mA

mW

°C

°C

Unit

V

µA

pF

ns

(Ta = 25°C)

Test Condition

IF = 100 mA

VR = 35 V

VR = 0.5 V, f = 1 MHz

IF = 10 mA, VR = 6 V, RL = 50 Ω

Rev.3.00 Mar 25, 2005 page 2 of 4

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