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IRF7457PBF

HEXFET P
ower MOSFET

International Rectifier 

IRF7457PbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

20

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient –––

RDS(on)

–––

Static Drain-to-Source On-Resistance

–––

VGS(th)

Gate Threshold Voltage

1.0

IDSS

Drain-to-Source Leakage Current

–––

–––

IGSS

Gate-to-Source Forward Leakage

–––

Gate-to-Source Reverse Leakage

–––

––– –––

0.023 –––

5.5 7.0

8.0 10.5

––– 3.0

––– 20

––– 100

––– 200

––– -200

V

V/°C

mΩ

V

µA

nA

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 15A ƒ

VGS = 4.5V, ID = 12A ƒ

VDS = VGS, ID = 250µA

VDS = 16V, VGS = 0V

VDS = 16V, VGS = 0V, TJ = 125°C

VGS = 16V

VGS = -16V

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

gfs

Qg

Qgs

Qgd

Qoss

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Forward Transconductance

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Output Gate Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

30 ––– ––– S VDS = 16V, ID = 12A

––– 28 42

ID = 12A

––– 11 17 nC VDS = 10V

––– 10 15

VGS = 4.5V, ƒ

––– 25 38

VGS = 0V, VDS = 10V

––– 14 –––

VDD = 10V,

––– 16 ––– ns ID = 12A

––– 16 –––

RG = 1.8Ω

––– 7.5 –––

VGS = 4.5V ƒ

––– 3100 –––

VGS = 0V

––– 1600 –––

VDS = 10V

––– 270 ––– pF ƒ = 1.0MHz

Avalanche Characteristics

Parameter

EAS

Single Pulse Avalanche Energy‚

IAR

Avalanche Current

Typ.

–––

–––

Max.

265

15

Units

mJ

A

Diode Characteristics

Symbol

IS

ISM

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

2

Min.

–––

–––

–––

–––

–––

–––

–––

–––

Typ. Max.

––– 2.5

––– 120

0.8 1.3

0.67 –––

50 75

70 105

50 75

74 110

Units

A

V

ns

nC

ns

nC

Conditions

MOSFET symbol

D

showing the

integral reverse

G

p-n junction diode.

S

TJ = 25°C, IS = 12A, VGS = 0V ƒ

TJ = 125°C, IS = 12A, VGS = 0V

TJ = 25°C, IF = 12A, VR= 15V

di/dt = 100A/µs ƒ

TJ = 125°C, IF = 12A, VR=15V

di/dt = 100A/µs ƒ

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