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IRF840

500V N-Channel MOSFET

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel Mosfet Transistor

isc Product Specification

IRF840

·FEATURES

·Drain Current –ID=8.0A@ TC=25℃

·Drain Source Voltage-

: VDSS= 500V(Min)

·Static Drain-Source On-Resistance

: RDS(on) = 0.85Ω(Max)

·DESCRITION

·Designed for high voltage, high speed switching power applic-

ations such as switching regulators, converters, solenoid and

relay drivers.

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

VGS

Drain-Source Voltage

Gate-Source Voltage-Continuous

500

V

±20

V

ID

Drain Current-Continuous

8

A

IDM

Drain Current-Single Plused

32

A

PD

Total Dissipation @TC=25℃

125

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150 ℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Rth j-a

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

1.0

62.5

℃/W

℃/W

isc Website：www.iscsemi.cn

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