FA01220A Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
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FA01220A Datasheet PDF : 3 Pages
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DESCRIPTION
FA01220A is RF Hybrid IC designed for 1.5GHz band
small size handheld radio.
FEATURES
• Low voltage
• High gain
• High efficiency
• High power
3.5V
20.5B
50%
30.5dBm
APPLICATION
PDC1.5GHz
MITSUBISHI SEMICONDUCTOR GaAs FET
FA01220A
GaAs FET HYBRID IC
GND
1
8
2
7
3
6
4
5
GND
10.0
Unit:mm
0.8
2.0
6.0
tolerance:±0.2
1 RF INPUT
2 VD1
3 GND
4 VD2
5 RF OUTPUT
6 GND
7 GND
8 VG1,2
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Condition
VD
Drain voltage
Tc=25˚C, Po≤30.5dBm
Pin
Input power
Tc=25˚C, ZG=ZL=50Ω
TC(op) Operating case temp
Tstg
Storage temp
Note: Each maximum ratings is guaranteed independently and duty=1/3 operation. T=20 msec
ELECTRICAL CHARACTERISTICS(Ta=25˚C)
Symbol
Parameter
f
Pin
IDt
ρin
ACP50
ACP100
2fo
3fo
Frequency
Input power
PO=30.5dBm
Total drain current
VD1=VD2=3.5V
Return loss
VG1,2=-2.5V
±50kHz adjacent channel power ZG=ZL=50Ω
±100kHz adjacent channel power (π/4DQPSK)
2nd harmonics
3rd harmonics
Ditto
(CW)
Test conditions
Ratings
4.5
15
-20 to +85
-30 to +90
Unit
V
dBm
˚C
˚C
Min
1429
–
–
–
–
–
–
–
Limits
Typ
–
(7)
640
–
–
–
–
–
Max
1453
10
720
-6
-47
-62
-30
-30
Unit
MHz
dBm
mA
dB
dBc
dBc
dBc
dBc
Nov. ´97
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