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IRFB9N65APBF(2011) Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
Lista de partido
IRFB9N65APBF
(Rev.:2011)
Vishay
Vishay Semiconductors Vishay
IRFB9N65APBF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
IRFB9N65A, SiHFB9N65A
Vishay Siliconix
15 V
VDS
L
Driver
RG
20 V
tp
D.U.T.
IAS
0.01 Ω
+
- VDAD
A
A
Fig. 12a - Unclamped Inductive Test Circuit
V DS
tp
800
780
760
740
720
700
A
0
1
2
3
4
5
6
I av , Avalanche Current (A)
Fig. 12d - Typical Drain-to-Source Voltage vs.
Avalanche Current
IAS
Fig. 12b - Unclamped Inductive Waveforms
800
ID
TOP
2.3A
3.3A
BOTTOM 5.2A
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
D.U.T.
+
-VDS
VGS
3 mA
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91104
S11-0561-Rev. C, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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