IRFBC40 Ver la hoja de datos (PDF) - Harris Semiconductor
Número de pieza
componentes Descripción
Lista de partido
IRFBC40 Datasheet PDF : 7 Pages
| |||
IRFBC40, IRFBC42
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 2) (See Figures 15,16) . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFBC40
600
600
6.2
3.9
25
±20
125
1.0
570
-55 to 150
300
260
IRFBC42
600
600
5.4
3.4
22
±20
125
1.0
570
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
o
oC
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 4)
IRFBC40
BVDSS VGS = 0V, ID = 250µA, (Figure 11)
600
-
-
V
VGS(TH) VGS = VDS, ID = 250µA
2.0
-
4.0
V
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC -
-
25
µA
-
250 µA
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
6.2
-
-
A
IRFBC42
5.4
-
-
A
Gate to Source Leakage
IGSS VGS = ±20V
-
- ±100 nA
Drain to Source On Resistance (Note 2)
IRFBC40
rDS(ON) VGS = 10V, ID = 3.4A, (Figures 9, 10)
-
0.97 1.2
Ω
IRFBC42
-
1.2 1.6
Ω
Forward Transconductance (Note 4)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
gfs VDS ≥ 100V, IDS = 3.4A, (Figure 13)
4.7 70
-
S
td(ON) VDD = 300V, ID ≈ 6.2A, RG = 9.1Ω, VGS = 10V,
-
tr
RL = 47Ω, (Figures 17, 18)
Switching Speeds are Essentially ndependent of
-
td(OFF) Operating Temperature
-
13 20
ns
18 27
ns
55 83
ns
Fall Time
tf
-
20 30
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Qg(TOT) VGS = 10V, ID = 6.2A, VDS = 0.7 x Rated BVDSS, -
(Figures 19, 20)
40 60 nC
Gate Charge is Essentially Independent of
Qgs Operating Temperature
-
5.5
-
nC
Qgd
-
20
-
nC
Input Capacitance
CISS VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 12)
- 1300 -
pF
Output Capacitance
COSS
-
160
-
pF
Reverse Transfer Capacitance
CRSS
-
45
-
pF
5-2
Share Link: 