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IRFBC40

6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET

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IRFBC40

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Single Pulse Avalanche Energy Rating (Note 2) (See Figures 15,16). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

IRFBC40

600

600

6.2

3.9

25

±20

125

1.0

570

-55 to 150

300

260

UNITS

V

V

A

A

A

V

W

W/oC

mJ

oC

oC

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Drain to Source Breakdown Voltage

BVDSS VGS = 0V, ID = 250µA, (Figure 11)

600

Gate to Source Threshold Voltage

VGS(TH) VGS = VDS, ID = 250µA

2.0

Zero Gate Voltage Drain Current

IDSS VDS = Rated BVDSS, VGS = 0V

-

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC

-

On-State Drain Current (Note 4)

ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V

6.2

Gate to Source Leakage

IGSS VGS = ±20V

-

Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 3.4A (Figures 9, 10)

-

Forward Transconductance (Note 4)

gfs

VDS ≥ 100V, IDS = 3.4A (Figure 13)

4.7

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

td(ON) VDD = 300V, ID ≈ 6.2A, RG = 9.1Ω, VGS = 10V,

-

tr

RL = 47Ω Switching Speeds are Essentially

ndependent of Operating Temperature

-

td(OFF)

-

Fall Time

Total Gate Charge

(Gate to Source + Gate to Drain)

Gate to Source Charge

tf

-

Qg(TOT) VGS = 10V, ID = 6.2A, VDS = 0.7 x Rated BVDSS

-

(Figure 14) Gate Charge is Essentially Independent of

Qgs

Operating Temperature

-

Gate to Drain “Miller” Charge

Input Capacitance

Qgd

-

CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 12)

-

Output Capacitance

COSS

-

Reverse Transfer Capacitance

CRSS

-

Internal Drain Inductance

Internal Source Inductance

LD

Measured from the Drain Modified MOSFET

-

Lead, 6mm (0.25in) from Symbol Showing the

Package to Center of Die Internal Devices

LS

Measured from the Source Inductances

Lead, 6mm (0.25in) from

D

-

Header to Source Bonding

LD

Pad

G

LS

S

Thermal Resistance Junction to Case

RθJC

-

Thermal Resistance Junction to Ambient RθJA Typical Socket Mount

-

TYP MAX UNITS

-

-

V

-

4.0

V

-

25

µA

-

250

µA

-

-

A

-

±100 nA

0.97 1.2

Ω

70

-

S

13

20

ns

18

27

ns

55

83

ns

20

30

ns

40

60

nC

5.5

-

nC

20

-

nC

1300 -

pF

160

-

pF

45

-

pF

4.5

-

nH

7.5

-

nH

-

1.0 oC/W

-

80 oC/W

4-264

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