IRFBF20(2008) Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFBF20 Datasheet PDF : 8 Pages
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IRFBF20, SiHFBF20
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.50
-
MAX.
62
-
2.3
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 900 V, VGS = 0 V
VDS = 720 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.0 Ab
VDS = 100 V, ID = 1.0 A
900
-
-
V
-
1.1
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
100
µA
-
-
500
-
-
8.0
Ω
0.60
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
490
-
-
55
-
pF
-
18
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
-
VGS = 10 V
ID = 1.7 A, VDS = 360 V,
see fig. 6 and 13b
-
-
-
VDD = 450 V, ID = 1.7 A,
-
RG = 18 Ω, RD = 280 Ω, see fig. 10b
-
-
-
38
-
4.7
nC
-
21
8.0
-
21
-
ns
56
-
32
-
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS
die contact
S
-
4.5
-
nH
-
7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
-
-
1.7
A
-
-
6.8
Body Diode Voltage
VSD
TJ = 25 °C, IS = 1.7 A, VGS = 0 Vb
-
-
1.5
V
Body Diode Reverse Recovery Time
trr
-
350
530
ns
TJ = 25 °C, IF = 1.7 A, dI/dt = 100 A/μs
Body Diode Reverse Recovery Charge
Qrr
-
0.85 1.3
nC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
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Document Number: 91120
S-81262-Rev. A, 07-Jul-08
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