IRFBG20PBF Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFBG20PBF Datasheet PDF : 9 Pages
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www.vishay.com
IRFBG20, SiHFBG20
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.50
-
MAX.
62
-
2.3
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 1000 V, VGS = 0 V
VDS = 800 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 0.84 A b
VDS = 50 V, ID = 0.84 A b
1000
-
2.0
-
-
-
-
1.0
-
-
V
1.2
-
V/°C
-
4.0
V
-
± 100 nA
-
100
μA
-
500
-
11
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
500
-
-
52
-
pF
-
17
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
-
38
Qgs
VGS = 10 V
ID = 1.4 A, VDS = 400 V,
see fig. 6 and 13 b
-
-
4.9
nC
Qgd
-
-
22
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = 500 V, ID = 1.4 A,
Rg = 18 , RD = 370 , see fig. 10 b
-
9.4
-
-
17
-
ns
-
58
-
-
31
-
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS
die contact
S
-
4.5
-
nH
-
7.5
-
Gate Input Resistance
Rg
Drain-Source Body Diode Characteristics
f = 1 MHz, open drain
0.6
-
3.4
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Current a
integral reverse
ISM
p - n junction diode
D
G
S
-
-
1.4
A
-
-
5.6
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 1.4 A, VGS = 0 V b
-
-
1.5
V
trr
Qrr
TJ = 25 °C, IF = 1.4 A, dI/dt = 100 A/μs b
-
-
130
190
ns
0.46 0.69 μC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
S16-0763-Rev. C, 02-May-16
2
Document Number: 91123
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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