IRFD014(2008) Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFD014 Datasheet PDF : 8 Pages
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IRFD014, SiHFD014
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
RthJA
TYP.
-
MAX.
120
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 60 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 1.0 Ab
VDS = 25 V, ID = 1.0 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 10 A, VDS = 48 V
see fig. 6 and 13b
VDD = 30 V, ID = 10 A
RG = 24 Ω, RD = 2.7 Ω, see fig. 10b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS
die contact
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
MIN. TYP. MAX. UNIT
60
-
-
V
-
0.063
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
0.20
Ω
0.96
-
-
S
-
310
-
-
160
-
pF
-
37
-
-
-
11
-
-
3.1
nC
-
-
5.8
-
10
-
-
50
-
ns
-
13
-
-
19
-
-
4.0
-
nH
-
6.0
-
-
-
1.7
A
-
-
14
Body Diode Voltage
VSD
TJ = 25 °C, IS = 1.7 A, VGS = 0 Vb
-
-
1.6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/µsb
70
140
ns
Qrr
-
0.20 0.40 µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91125
S-81263-Rev. A, 21-Jul-08
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