IRFE9210 Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Lista de partido

IRFE9210

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS SURFACE MOUNT (LCC-18)

International Rectifier 

IRFE9210

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

BVDSS

∆BVDSS/∆TJ

RDS(on)

VGS(th)

gfs

IDSS

Parameter

Drain-to-Source Breakdown Voltage

Temperature Coefficient of Breakdown

Voltage

Static Drain-to-Source On-State

Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

IGSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

LS + LD

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Inductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Min Typ Max Units

-200 — — V

— -0.22 — V/°C

— — 3.0

—

— 3.45 Ω

-2.0 — - 4.0 V

0.7 — — S ( )

— — -25

— — -250 µA

—

— -100 nA

— — 100

— — 8.9

— — 2.1 nC

— — 3.9

— — 15

— — 25

ns

— — 40

— — 15

— 6.1 — nH

— 170

— 54 — pF

— 17 —

Test Conditions

VGS = 0V, ID = -1.0mA

Reference to 25°C, ID = -1.0mA

VGS = -10V, ID = -0.84A➃

VGS = -10V, ID = -1.3A ➃

VDS = VGS, ID = -250µA

VDS > -15V, IDS = -0.84A➃

VDS= -160V, VGS= 0V

VDS =-160V

VGS = 0V, TJ = 125°C

VGS =-20V

VGS =20V

VGS =-10V, ID= -1.3A

VDS =-100V

VDD =-100V, ID = -1.3A,

RG =7.5Ω

Measured from the center of

drain pad to center of source

pad

VGS = 0V, VDS = -25V

f = 1.0MHz

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

IS Continuous Source Current (Body Diode)

ISM Pulse Source Current (Body Diode) ➀

— — -1.3 A

— — -5.2

Test Conditions

VSD

trr

QRR

ton

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

— — -5.8 V

Tj = 25°C, IS = -1.3A, VGS = 0V ➃

— — 300 nS Tj = 25°C, IF = -1.3A, di/dt ≤-100A/µs

— — 3.0 µc

VDD ≤ -50V ➃

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance

Parameter

RthJC

RthJ-PCB

Junction to Case

Junction to PC Board

For footnotes refer to the last page

2

Min Typ Max Units

— — 11

— — 27" "°C"/W

Test Conditions

Soldered to a copper clad PC board

www.irf.com

Share Link: