IRFIBC40G Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFIBC40G Datasheet PDF : 8 Pages
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IRFIBC40G, SiHFIBC40G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
65
3.1
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.1 Ab
VDS = 50 V, ID = 2.1 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Ciss
Coss
Crss
C
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
f = 1.0 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 10 V
ID = 6.2 A, VDS = 360 V,
see fig. 6 and 13b
VDD = 300 V, ID = 6.2 A,
RG = 9.1 Ω, RD = 47 Ω,
see fig. 10b
MIN.
600
-
2.0
-
-
-
-
4.9
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
0.70
-
V/°C
-
4.0
V
-
± 100 nA
-
100
µA
-
500
-
1.2
Ω
-
-
S
1300
-
160
-
pF
30
-
12
-
-
60
-
8.3
nC
-
30
13
-
18
-
ns
55
-
20
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
3.5
A
-
-
14
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 3.5 A, VGS = 0 Vb
-
-
1.5
V
trr
-
470
940
ns
TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/µsb
Qrr
-
4.0
7.9
µC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91182
S-81273-Rev. A, 16-Jun-08
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