IRFIBF30GPBF Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFIBF30GPBF Datasheet PDF : 8 Pages
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IRFIBF30G, SiHFIBF30G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
65
3.6
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 900 V, VGS = 0 V
VDS = 720 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.1 Ab
VDS = 50 V, ID = 1.1 Ab
900
-
-
V
-
1.1
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
100
µA
-
-
500
-
-
3.7
Ω
1.7
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Ciss
Coss
Crss
C
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
f = 1.0 MHz
-
1200
-
-
320
-
pF
-
200
-
-
12
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
-
VGS = 10 V
ID = 3.6 A, VDS = 360 V,
see fig. 6 and 13b
-
-
-
VDD = 450 V, ID = 3.6 A,
-
RG = 12 Ω, RD= 120 Ω,
see fig. 10b
-
-
-
78
-
10
nC
-
42
14
-
25
-
ns
90
-
30
-
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS
die contact
S
-
4.5
-
nH
-
7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
1.9
A
-
-
7.6
Body Diode Voltage
VSD
TJ = 25 °C, IS = 1.9 A, VGS = 0 Vb
-
-
1.8
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
430
650
ns
TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/µsb
Qrr
-
1.4
2.1
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91186
S09-0063-Rev. A, 02-Feb-09
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