IRFL210PBF Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Lista de partido
IRFL210PBF Datasheet PDF : 8 Pages
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IRFL210, SiHFL210
Vishay Siliconix
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T
IAS
0.01 Ω
+
- V DD
Fig. 12a - Unclamped Inductive Test Circuit
VDS
VDS
tp
VDD
IAS
Fig. 12b - Unclamped Inductive Waveforms
120
ID
Top 0.43 A
100
0.61 A
Bottom 0.90 A
80
60
40
20
0 VDD = 50 V
25
50
75
100
125
150
91193_12C
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
VGS
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91193
S-81377-Rev. A, 30-Jun-08
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