IRFP 360
Symbol
gfs
C
iss
Coss
Crss
td(on)
tr
td(off)
tf
Q
g(on)
Qgs
Q
gd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 14 A, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 4.3 Ω (External)
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
14
S
4500
pF
1100
pF
490
pF
24
ns
33
ns
100
ns
30
ns
210 nC
30 nC
110 nC
0.45 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Ratings and Characteristics
(T = 25°C unless otherwise specified)
J
Min. Typ.
Max.
IS
VGS= 0
ISM
Repetitive; pulse width limited by TJM
V
I = I , V = 0 V,
SD
F S GS
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
23
A
92
A
1.8
V
trr
IF = IS, -di/dt = 100 A/µs
Qrr
420 630 ns
5.6 8.4 µC
TO-247 AD Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A
4.7 5.3
A
2.2 2.54
1
A
2.2 2.6
2
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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