IRFPS37N50APBF Ver la hoja de datos (PDF) - Vishay Semiconductors

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IRFPS37N50APBF

Power MOSFET

Vishay Semiconductors 

IRFPS37N50A, SiHFPS37N50A

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

1000

100

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

1000

100

10

10

4.5V

1

TJ = 150° C

TJ = 25° C

0.1

0.1

20µs PULSE WIDTH

TJ= 25 °C

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

V DS= 50V

20µs PULSE WIDTH

1

4.0

5.0

6.0

7.0

8.0

9.0

VGS , Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

100

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

4.5V

20µs PULSE WIDTH

TJ= 150 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

3.0 ID = 36A

2.5

2.0

1.5

1.0

0.5

VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature ( °C)

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91258

S11-0111-Rev. C, 07-Feb-11

www.vishay.com

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