IRFPS40N50L Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFPS40N50L Datasheet PDF : 9 Pages
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IRFPS40N50L, SiHFPS40N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
380
80
190
Single
0.087
D
Super-247
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Superfast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
Available
• Lower Gate Charge Results in Simpler Drive RoHS*
Requirements
COMPLIANT
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control Applications
Super-247
IRFPS40N50LPbF
SiHFPS40N50L-E3
IRFPS40N50L
SiHFPS40N50L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 0.86 mH, Rg = 25 , IAS = 46 A (see fig. 12).
c. ISD 46 A, dI/dt 550 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
500
± 30
46
29
180
4.3
920
46
54
540
34
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91260
S11-0111-Rev. C, 07-Feb-11
www.vishay.com
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