IRFPS40N50LPBF Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFPS40N50LPBF Datasheet PDF : 9 Pages
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IRFPS40N50L, SiHFPS40N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambienta
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)a
Note
a. Rth is measured at TJ approximately 90 °C.
SYMBOL
RthJA
RthCS
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.23
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 28 Ab
VDS = 50 V, ID = 46 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Ciss
Coss
Crss
Coss
Coss eff.
Coss eff. (ER)
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V
VDS = 1.0 V , f = 1.0 MHz
VDS = 400 V , f = 1.0 MHz
VDS = 0 V to 400 Vc
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Qg
Qgs
Qgd
RG
td(on)
tr
td(off)
tf
VGS = 10 V
ID = 46 A, VDS = 400 V,
see fig. 7 and 15b
f = 1 MHz, open drain
VDD = 250 V, ID = 46 A,
RG = 0.85 , VGS = 10 V,
see fig. 14a and 14bb
MIN.
500
-
3.0
-
-
-
-
21
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
TYP. MAX. UNIT
-
0.60
-
-
-
-
0.087
-
-
-
5.0
± 100
50
2.0
0.100
-
V
V/°C
V
nA
μA
mA
S
8110
-
960
-
130
-
11200 -
pF
240
-
440
-
310
-
-
380
-
80
nC
-
190
0.90
-
27
-
170
-
ns
50
-
69
-
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM
p - n junction diode
D
G
S
-
-
46
A
-
-
180
Body Diode Voltage
VSD
TJ = 25 °C, IS = 46 A, VGS = 0 Vb
-
-
1.5
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 46 A
TJ = 125 °C, dI/dt = 100 A/μsb
-
170 250
ns
-
220 330
Body Diode Reverse Recovery Charge
Qrr
TJ = 25 °C, IS = 46 A, VGS = 0 Vb
TJ = 125 °C, dI/dt = 100 A/μsb
-
705 1060
nC
-
1.3
2.0
Reverse Recovery Current
IRRM
TJ = 25 °C
-
9.0
-
A
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 400 μs; duty cycle 2 %.
c.
CCoossss
eff.
eff.
is a fixed capacitance that
(ER) is a fixed capacitance
gives the same
that stores the
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www.vishay.com
2
Document Number: 91260
S11-0111-Rev. C, 07-Feb-11
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