IRFR4105ZLPBF Ver la hoja de datos (PDF) - International Rectifier

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IRFR4105ZLPBF

HEXFET® Power MOSFET

International Rectifier 

1000

100

10

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

1

0.1

00.1

4.5V

60µs PULSE WIDTH

Tj = 25°C

1

10

11000

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

IRFR/U4105ZPbF

1000

100

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

1

00.1

4.5V

60µs PULSE WIDTH

Tj = 175°C

1

10

11000

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

100

TJ = 175°C

10

TJ = 25°C

1

VDS = 25V

60µs PULSE WIDTH

0

4

5

6

7

8

9

10

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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30

TJ = 175°C

25

20

15

TJ = 25°C

10

5

VDS = 8.0V

380µs PULSE WIDTH

0

0

10

20

30

40

ID, Drain-to-Source Current (A)

Fig 4. Typical Forward Transconductance

Vs. Drain Current

3

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