IRFU9110 Ver la hoja de datos (PDF) - Vishay Semiconductors

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componentes Descripción

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IRFU9110

Power MOSFET

Vishay Semiconductors 

IRFR9110, IRFU9110, SiHFR9110, SiHFU9110

Vishay Siliconix

VDS

Vary tp to obtain

required IAS

RG

- 10 V

tp

L

D.U.T

IAS

0.01 Ω

-

+

V

DD

Fig. 12a - Unclamped Inductive Test Circuit

IAS

VDS

VDD

tp

VDS

Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

- 10 V

QGS

VG

QG

QGD

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

-

D.U.T. + VDS

VGS

- 3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

www.vishay.com

6

Document Number: 91279

S-81392-Rev. A, 07-Jul-08

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