IRG4PC60F
100000
10000
Cies
VGE = 0V, f = 1 MHZ
Cies = Cge + Cgc, Cce SHORTED
Cres = Cce
Coes = Cce + Cgc
1000
Coes
100
Cres
10
0
100
200
300
400
500
VCE (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
V CC = 400V
I C = 40A
15
10
5
0
0
50
100
150
200
250
300
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
8.00
VCC= 480V
VGE = 15V
TJ = 25°C
7.00 I C= 60A
100
RG = 5.0 Ω
VGE = 15V
VCC = 480V
IC = 120A
6.00
5.00
4.00
0
10
20
30
40
50
RG, Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
10
IC = 60A
IC = 30A
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5