IRGIB10B60KD1 Ver la hoja de datos (PDF) - International Rectifier

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IRGIB10B60KD1

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRGIB10B60KD1

20

18

16

14

12

10

8

6

4

2

0

0

VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

2

4

6

VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics

TJ = -40°C; tp = 80µs

20

18 VGE = 18V

VGE = 15V

16 VGE = 12V

VGE = 10V

14 VGE = 8.0V

12

10

8

6

4

2

0

0

2

4

6

VCE (V)

Fig. 6 - Typ. IGBT Output Characteristics

TJ = 25°C; tp = 80µs

20

18 VGE = 18V

16 VGE = 15V

VGE = 12V

14 VGE = 10V

12 VGE = 8.0V

10

8

6

4

2

0

0

2

4

6

VCE (V)

Fig. 7 - Typ. IGBT Output Characteristics

TJ = 150°C; tp = 80µs

4

40

35

-40°C

25°C

150°C

30

25

20

15

10

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VF (V)

Fig. 8 - Typ. Diode Forward Characteristics

tp = 80µs

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