IRGB15B60KDPBF Ver la hoja de datos (PDF) - International Rectifier

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IRGB15B60KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRGB/S/SL15B60KDPbF

1

D = 0.50

0.20

0.1

0.10

0.05

0.01

0.02

0.01

τJ τJ

τ1 τ1

R1R1

Ci= τi/Ri

Ci i/Ri

R2R2

τ2 τ2

R3R3 Ri (°C/W) τi (sec)

τCτ 0.231

0.000157

τ3 τ3

0.175 0.000849

0.201 0.011943

SINGLE PULSE

( THERMAL RESPONSE )

Notes :

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-6

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

t1 , Rectangular Pulse Duration (sec)

Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

1 D = 0.50

0.20

0.10

0.1

0.05

0.01

0.02

0.01

0.001

1E-6

SINGLE PULSE

( THERMAL RESPONSE )

τJ τJ

τ1 τ1

R1R1

Ci= τi/Ri

Ci i/Ri

R2R2

τCτ

τ2 τ2

Ri (°C/W) τi (sec)

1.164 0.000939

0.9645 0.035846

Notes :

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

t1 , Rectangular Pulse Duration (sec)

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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