IRHQ6110(2004) Ver la hoja de datos (PDF) - International Rectifier

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IRHQ6110
(Rev.:2004)

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)

International Rectifier 

IRHQ6110

Footnotes:

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

➁ VDD = 25V, starting TJ = 25°C, L= 18.7mH,

Peak IL = 3.0A, VGS = 12V

➂ ISD ≤ 3.0A, di/dt ≤ 165A/µs,

VDD ≤ 100V, TJ ≤ 150°C

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Pre-Irradiation

➄ Total Dose Irradiation with VGS Bias.

12 volt VGS applied and VDS = 0 during

irradiation per MIL-STD-750, method 1019, condition A

➅ Total Dose Irradiation with VDS Bias.

80 volt VDS applied and VGS = 0 during

irradiation per MlL-STD-750, method 1019, condition A

⑦ VDD = - 25V, starting TJ = 25°C, L= 28.4mH,

Peak IL = - 2.3A, VGS = -12V

⑧ ISD ≤ - 2.3A, di/dt ≤ - 244A/µs,

VDD ≤ -100V, TJ ≤ 150°C

Case Outline and Dimensions — LCC-28

Q2

Q1

Q3

Q4

Q3

Q4

Q2

Q1

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 03/2004

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