IRHQ6110 Ver la hoja de datos (PDF) - International Rectifier

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IRHQ6110

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)

International Rectifier 

Pre-Irradiation

P-Channel

Q2,Q3

500

VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

400

Coss = Cds + Cgd

20

ID = -2.3A

16

300

Ciss

12

IRHQ6110

VDS = 80V

VDS = 50V

VDS = 20V

200

Coss

100

Crss

0

1

10

100

-VDS , Drain-to-Source Voltage (V)

8

4

FOR TEST CIRCUIT

SEE FIGURE 1236

0

0

4

8

12

16

QG , Total Gate Charge (nC)

Fig 18. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 19. Typical Gate Charge Vs.

Gate-to-Source Voltage

10

TJ = 150° C

1

TJ = 25°C

0.1

0.5

VGS = 0 V

1.0 1.5 2.0 2.5 3.0 3.5

-VSD ,Source-to-Drain Voltage (V)

Fig 20. Typical Source-Drain Diode

Forward Voltage

www.irf.com

100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

10

100us

1ms

1

10ms

TC = 25 °C

TJ = 150 °C

Single Pulse

0.1

1

10

100

1000

-VDS , Drain-to-Source Voltage (V)

Fig 21. Maximum Safe Operating Area

11

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