Product specification
IRLML2502PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
ΔVGS(th)
gfs
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
0.60
–––
5.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.01
0.035
0.050
–––
-3.2
–––
–––
–––
–––
–––
8.0
1.8
1.7
7.5
10
54
26
740
90
66
Max. Units
Conditions
–––
–––
0.045
0.080
1.2
–––
V VGS = 0V, ID = 250uA
V/°C
Ω
Reference to 25°C, ID = 1.0mA
d VGS = 4.5V, ID = 4.2A
d VGS = 2.5V, ID = 3.6A
V
VDS = VGS, ID = 250μA
mV/°C
–––
1.0
25
100
-100
12
2.7
2.6
–––
–––
–––
–––
–––
–––
–––
S VDS = 10V, ID = 4.0A
μA VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 70°C
nA VGS = 12V
VGS = -12V
ID = 4.0A
d nC VDS = 10V
VGS = 5.0V
VDD = 10V
ns ID = 1.0A
d RG = 6Ω
RD = 10Ω
VGS = 0V
pF VDS = 15V
ƒ = 1.0MHz
Source-Drain Rating and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
à (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
––– ––– 1.3
––– ––– 33
––– ––– 1.2
MOSFET symbol
D
A showing the
integral reverse
G
p-n junction diode.
S
d V TJ = 25°C, IS = 1.3A, VGS = 0V
––– 16
––– 8.6
24
13
dà ns TJ = 25°C, IF = 1.3A
nC di/dt = 100A/μs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300μs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.
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