IRLML2502PBF Ver la hoja de datos (PDF) - International Rectifier

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IRLML2502PBF

HEXFET® power MOSFET

International Rectifier 

100

VGS

TOP 7.00V

5.00V

4.50V

3.50V

3.00V

2.70V

2.50V

BOTTOM 2.25V

10

2.25V

IRLML2502PbF

100

VGS

TOP 7.00V

5.00V

4.50V

3.50V

3.00V

2.70V

2.50V

BOTTOM 2.25V

10

2.25V

20μs PULSE WIDTH

TJ= 25 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

20μs PULSE WIDTH

TJ= 150 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

TJ = 25°C

TJ = 150° C

10

2.0

V DS= 15V

20μs PULSE WIDTH

2.4

2.8

3.2

3.6

4.0

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.0 ID = 4.0A

1.5

1.0

0.5

VGS = 4.5V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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