IXGH12N90C Ver la hoja de datos (PDF) - IXYS CORPORATION
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IXGH12N90C Datasheet PDF : 2 Pages
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IXGH 12N90C
Symbol
gfs
Cies
C
oes
Cres
Qg
Q
ge
Qgc
t
d(on)
tri
t
d(off)
tfi
E
off
td(on)
t
ri
Eon
t
d(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
5 10
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
V = 25 V, V = 0 V, f = 1 MHz
CE
GE
780
pF
60
pF
15
pF
I = I , V = 15 V, V = 0.5 V
C C90 GE
CE
CES
33
nC
10
nC
12
nC
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 300 mH
V
CE
=
0.8
•
V,
CES
R
G
=
R
off
=
22
W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased R
G
Inductive load, TJ = 125°C
I
C
=
I,
C90
V
GE
=
15
V,
L
=
300
mH
VCE = 0.8 • VCES, RG = Roff = 22 W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased R
G
20
ns
20
ns
135 200 ns
70 180 ns
0.32 0.70 mJ
20
ns
20
ns
0.15
mJ
200
ns
150
ns
0.70
mJ
1.25 K/W
0.25
K/W
TO-247 AD (IXGH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F
5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J
1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L
4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
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