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BAV23

General purpose double diode

Philips Electronics 

Philips Semiconductors

General purpose double diode

Product specification

BAV23S

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

Per diode

VF

forward voltage

VF

forward voltage

IR

reverse current

IR

reverse current

Cd

diode capacitance

trr

reverse recovery time

CONDITIONS

MAX.

UNIT

see Fig.3

IF = 100 mA

1.0

V

IF = 200 mA

1.25

V

series connection; see Fig.3

IF = 100 mA

2.0

V

IF = 200 mA

2.5

V

see Fig.5

VR = 200 V

100

nA

VR = 200 V; Tj = 150 °C

100

mA

series connection

VR = 400 V

100

nA

VR = 400 V; Tj = 150 °C

100

mA

f = 1 MHz; VR = 0; see Fig.6

5

pF

when switched from IF = 30 mA to 50

ns

IR = 30 mA; RL = 100 Ω; measured

at IR = 3 mA; see Fig.7

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-tp

Rth j-a

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

Note

1. Device mounted on an FR4 printed-circuit board.

CONDITIONS

note 1

VALUE

360

500

UNIT

K/W

K/W

1999 May 05

3

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