LY6212816 Ver la hoja de datos (PDF) - Lyontek Inc.

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LY6212816

128K X 16 BIT LOW POWER CMOS SRAM

Lyontek Inc. 

®

Rev. 1.3

LY6212816

128K X 16 BIT LOW POWER CMOS SRAM

DATA RETENTION CHARACTERISTICS

PARAMETER

VCC for Data Retention

Data Retention Current

Chip Disable to Data

Retention Time

Recovery Time

tRC* = Read Cycle Time

SYMBOL

TEST CONDITION

VDR CE# ≧ VCC - 0.2V

VCC = 1.5V

-SL

IDR CE# ≧ VCC - 0.2V

Other pins at 0.2V or VCC-0.2V -LL

tCDR

See Data Retention

Waveforms (below)

tR

DATA RETENTION WAVEFORM

Low Vcc Data Retention Waveform (1) (CE# controlled)

MIN.

1.5

-

-

0

tRC*

TYP.

-

1

1

-

-

MAX.

5.5

20

20

-

-

UNIT

V

µA

µA

ns

ns

Vcc

CE#

Vcc(min.)

tCDR

VIH

VDR ≧ 1.5V

CE# ≧ Vcc-0.2V

Vcc(min.)

tR

VIH

Low Vcc Data Retention Waveform (2) (LB#, UB# controlled)

Vcc

LB#,UB#

Vcc(min.)

tCDR

VIH

VDR ≧ 1.5V

LB#,UB# ≧ Vcc-0.2V

Vcc(min.)

tR

VIH

Lyontek Inc. reserves the rights to change the specifications and products without notice.

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

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