M6MGB166S2BWG Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
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M6MGB166S2BWG
MITSUBISHI ELECTRIC
M6MGB166S2BWG Datasheet PDF : 30 Pages
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MITSUBISHI LSIs
M6MGB/T166S2BWG
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM
Stacked-CSP (Chip Scale Package)
AC ELECTRICAL CHARACTERISTICS (Ta = -40 ~85°C, F-Vcc = 2.7V ~3.6V)
Read-Only Mode
Limits
Symbol
Parameter
F-Vcc=2.7-3.6V
Unit
90ns
tRC tAVAV Read cycle time
ta (AD) tAVQV Address access time
Min
Typ
Max
90
ns
90
ns
ta (CE) tELQV Chip enable access time
ta (OE) tGLQV Output enable access time
tCLZ tELQX Chip enable to output in low-Z
0
tDF(CE) tEHQZ Chip enable high to output in high Z
90
ns
30
ns
ns
25
ns
tOLZ tGLQX Output enable to output in low-Z
0
ns
tDF(OE) tGHQZ Output enable high to output in high Z
tPHZ tPLQZ F-RP# low to output high-Z
tOH tOH Output hold from F-CE#, F-OE#, addresses
0
25
ns
150
ns
ns
tPS tPHEL F-RP# recovery to F-CE# low
150
ns
Timing measurements are made under AC waveforms for read operations.
AC ELECTRICAL CHARACTERISTICS (Ta = -40 ~85°C, F-Vcc = 2.7V ~3.6V)
Write Mode (F-WE# control)
Limits
Symbol
Parameter
F-Vcc=2.7-3.6V
Unit
90ns
Min
Typ
Max
tWC tAVAV Write cycle time
90
ns
tAS tAVWH Address set-up time
50
ns
tAH tWHAX Address hold time
tDS tDVWH Data set-up time
0
ns
50
ns
tDH tWHDX Data hold time
0
ns
tOEH tWHGL F-OE# hold from F-WE# high
10
ns
tRE
-
Latency between Read and Write FFH or 71H
30
ns
tCS tELWL Chip enable set-up time
0
ns
tCH tWHEH Chip enable hold time
0
ns
tWP tWLWH Write pulse width
50
ns
tWPH tWHWL Write pulse width high
30
ns
tGHWL tGHWL F-OE# hold to F-WE# Low
0
ns
tBLS tPHHWH Block Lock set-up to write enable high
90
ns
tBLH tQVPH Block Lockhold from valid SRD
0
ns
tDAP tWHRH1 Duration of auto-program operation
4
80
ms
tDAE tWHRH2 Duration of auto-block erase operation
40
600
ms
tWHRL tWHRL Write enable high to F-RY/BY# low
90
ns
tPS tPHWL F-RP# high recovery to write enable low
150
ns
Read timing parameters during command write operations mode are the same as during read-only operations mode.
Typical values at F-Vcc=3.3V, Ta=25°C
11
Nov 1999 , Rev.2.3
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