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MBRD620CTT4

SWITCHMODE Power Rectifirers DPAK-3 Surface Mount Package

ON Semiconductor 

MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT

MAXIMUM RATINGS

Rating

MBRD

Symbol

Unit

620CT 630CT 640CT 650CT 660CT

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current

TC = 130°C (Rated VR)

Peak Repetitive Forward Current, TC = 130°C

(Rated VR, Square Wave, 20 kHz) Per Diode

Per Diode

Per Device

Nonrepetitive Peak Surge Current − (Surge applied at rated load

conditions halfwave, single phase, 60 Hz)

VRRM

20

30

40

50

60

V

VRWM

VR

IF(AV)

3

A

6

IFRM

6

A

IFSM

75

A

Peak Repetitive Reverse Surge Current (2 ms, 1 kHz)

IRRM

1

A

Operating Junction Temperature

TJ

−65 to +150

°C

Storage Temperature

Tstg

−65 to +175

°C

Voltage Rate of Change (Rated VR)

dv/dt

10,000

V/ms

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not

implied, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS PER DIODE

Maximum Thermal Resistance − Junction−to−Case

Maximum Thermal Resistance − Junction−to−Ambient (Note 1)

ELECTRICAL CHARACTERISTICS PER DIODE

RqJC

RqJA

6

°C/W

80

°C/W

Maximum Instantaneous Forward Voltage (Note 2)

VF

iF = 3 Amps, TC = 25°C

iF = 3 Amps, TC = 125°C

iF = 6 Amps, TC = 25°C

iF = 6 Amps, TC = 125°C

V

0.7

0.65

0.9

0.85

Maximum Instantaneous Reverse Current (Note 2)

iR

(Rated dc Voltage, TC = 25°C)

(Rated dc Voltage, TC = 125°C)

mA

0.1

15

1. Rating applies when surface mounted on the minimum pad size recommended.

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

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