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MC74HC373A Datasheet PDF : 10 Pages
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MC74HC373A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
Test Conditions
VCC
V – 55 to 25_C v 85_C v 125_C Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VIH Minimum High−Level Input
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Voltage
Vout = VCC – 0.1 V
|Iout| v 20 mA
2.0
1.5
3.0
2.1
4.5
3.15
6.0
4.2
1.5
1.5
V
2.1
2.1
3.15
3.15
4.2
4.2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VIL Maximum Low−Level Input
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Voltage
Vout = 0.1 V
|Iout| v 20 mA
2.0
0.5
3.0
0.9
4.5
1.35
6.0
1.8
0.5
0.5
V
0.9
0.9
1.35
1.35
1.8
1.8
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VOH Minimum High−Level Output
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Voltage
Vin = VIH
|Iout| v 20 mA
2.0
1.9
4.5
4.4
6.0
5.9
1.9
1.9
V
4.4
4.4
5.9
5.9
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VOL MaximumLow−LevelOutput
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Voltage
Vin = VIH
Vin = VIL
|Iout| v 20 mA
|Iout| v 2.4 mA 3.0
|Iout| v 6.0 mA 4.5
|Iout| v 7.8 mA 6.0
2.0
4.5
6.0
2.48
3.98
5.48
0.1
0.1
0.1
2.34
2.2
3.84
3.7
5.34
5.2
0.1
0.1
V
0.1
0.1
0.1
0.1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vin = VIL
|Iout| v 2.4 mA 3.0
|Iout| v 6.0 mA 4.5
|Iout| v 7.8 mA 6.0
Iin
Maximum Input Leakage Current Vin = VCC or GND
6.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ IOZ Maximum Three−State
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Leakage Current
Output in High−Impedance State 6.0
Vin = VIL or VIH
Vout = VCC or GND
0.26
0.26
0.26
± 0.1
± 0.5
0.33
0.33
0.33
± 1.0
± 5.0
0.4
0.4
0.4
± 1.0
mA
± 10
mA
ICC Maximum Quiescent Supply
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Current (per Package)
Vin = VCC or GND
Iout = 0 mA
6.0
4.0
40
160
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ NOTE:Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPLH Maximum Propagation Delay, Input D to Q
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPHL
(Figures 1 and 5)
VCC
Guaranteed Limit
V – 55 to 25_C v 85_C v 125_C Unit
2.0
125
155
190
ns
3.0
80
110
130
4.5
25
31
38
6.0
21
26
32
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPLH Maximum Propagation Delay, Latch Enable to Q
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPHL
(Figures 2 and 5)
2.0
140
3.0
90
4.5
28
6.0
24
175
210
ns
120
140
35
42
30
36
tPLZ Maximum Propagation Delay, Output Enable to Q
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPHZ
(Figures 3 and 6)
2.0
150
3.0
100
4.5
30
6.0
26
190
225
ns
125
150
38
45
33
38
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPZL Maximum Propagation Delay, Output Enable to Q
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPZH
(Figures 3 and 6)
2.0
150
3.0
100
4.5
30
6.0
26
190
225
ns
125
150
38
45
33
38
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tTLH Maximum Output Transition Time, Any Output
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tTHL
(Figures 1 and 5)
2.0
60
3.0
23
4.5
12
6.0
10
75
90
ns
27
32
15
18
13
15
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Cin Maximum Input Capacitance
Cout Maximum Three−State Output Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (Output in High−Impedance State)
10
10
10
pF
15
15
15
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ NOTE:For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD Power Dissipation Capacitance (Per Enabled Output)*
36
pF
* Used to determine the no−load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
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