MCR100-6 Ver la hoja de datos (PDF) - Inchange Semiconductor

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MCR100-6

Sensitive Gate Silicon Controlled Rectifiers

Inchange Semiconductor 

Thyristors

MCR100-6

‹ FEATURES

·With TO-92 package

·Sensitive gate trigger current

·Low reverse and forward blocking current

·Low holding current

‹ QUICK REFERENCE DATA

SYMBOL

PARAMETER

MIN UNIT

VDRM Repetitive peak off-state voltage

400

V

VRRM Repetitive peak off-state voltage

400

V

IT(AV) Average on-state current

1

A

PGM Peak gate power

0.1

W

PG(AV) Average gate power

0.01

W

ITSM

Non-repetitive peak on-state current

10

A

Tstg

Storage temperature range

-45-150 ℃

‹ LIMITING VALUES

Limiting values in accordance with the absolute maximum system(IEC 134)

SYMBOL

PARAMETER

CONDITIONS

VDRM

VRRM

IRRM

IDRM

IGT

VTM

IH

VGT

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Repetitive peak reverse current

Repetitive peak off-state current

Gate trigger current

On-state voltage

Holding current

Gate trigger voltage

ID=0.1mA

ID=0.5mA

VRRM=400V

VDRM=400V

VD=6V; RL=100Ω

IT=1A

IT=0.1A ,IGT=12mA

VD=6V ; RL=100Ω

INCHANGE

MIN

MAX UNIT

400

V

400

V

10

μA

10

μA

10

120 μA

1.7

V

5

mA

0.4

0.8

V

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